文献
J-GLOBAL ID:201702264461983169
整理番号:17A0465718
SiO2/4H-SiC構造における低速界面トラップに及ぼすホウ素取込の効果
Effect of boron incorporation on slow interface traps in SiO2/4H-SiC structures
著者 (6件):
OKAMOTO Dai
(Univ. Tsukuba, Ibaraki, JPN)
,
SOMETANI Mitsuru
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
HARADA Shinsuke
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
KOSUGI Ryoji
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
YONEZAWA Yoshiyuki
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
YANO Hiroshi
(Univ. Tsukuba, Ibaraki, JPN)
資料名:
Applied Physics. A. Materials Science & Processing
(Applied Physics. A. Materials Science & Processing)
巻:
123
号:
2
ページ:
133,1-6
発行年:
2017年02月
JST資料番号:
D0256C
ISSN:
0947-8396
CODEN:
APHYCC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)