文献
J-GLOBAL ID:201702264855022022
整理番号:17A0205035
自己ドープPt/HfO2の高度に改良された抵抗スイッチング性能:原子層堆積によるCu/Cuデバイス【Powered by NICT】
Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition
著者 (8件):
Liu Sen
(College of Electronic Science and Engineering, National University of Defense Technology)
,
Wang Wei
(College of Electronic Science and Engineering, National University of Defense Technology)
,
Li Qingjiang
(College of Electronic Science and Engineering, National University of Defense Technology)
,
Zhao Xiaolong
(Institute of Microelectronics, Chinese Academy of Sciences)
,
Li Nan
(College of Electronic Science and Engineering, National University of Defense Technology)
,
Xu Hui
(College of Electronic Science and Engineering, National University of Defense Technology)
,
Liu Qi
(Institute of Microelectronics, Chinese Academy of Sciences)
,
Liu Ming
(Institute of Microelectronics, Chinese Academy of Sciences)
資料名:
Science China. Physics, Mechanics & Astronomy
(Science China. Physics, Mechanics & Astronomy)
巻:
59
号:
12
ページ:
127311-1-127311-6
発行年:
2016年
JST資料番号:
C2587A
ISSN:
1674-7348
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)