文献
J-GLOBAL ID:201702265026794490
整理番号:17A0124329
パーコレーションシミュレーションを用いた高k金属ゲートMOSデバイスにおける温度・電位依存性トラップ生成モデル【Powered by NICT】
Temperature-and voltage-dependent trap generation model in high-k metal gate MOS device with percolation simulation
著者 (10件):
Xu Hao
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Yang Hong
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Wang Yanrong
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Wang Wenwu
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Luo Weichun
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Qi Luwei
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Li Junfeng
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Zhao Chao
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Chen Dapeng
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Ye Tianchun
(Institute of MicroElectronics, Chinese Academy of Sciences)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
8
ページ:
087306-1-087306-05
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)