文献
J-GLOBAL ID:201702265050300333
整理番号:17A1639017
パワーエレクトロニクス応用のための高K/low K化合物誘電体構造を用いた高破壊電圧垂直GaN PNダイオードの設計【Powered by NICT】
Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications
著者 (7件):
Du Jiangfeng
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China)
,
Du Jiangfeng
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK)
,
Li Zhenchao
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China)
,
Liu Dong
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China)
,
Bai Zhiyuan
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China)
,
Liu Yang
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China)
,
Yu Qi
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, PR China)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
111
ページ:
302-309
発行年:
2017年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)