文献
J-GLOBAL ID:201702265126296099
整理番号:17A0417540
末梢修復解析のためのEUVリソグラフィーを用いた12.2 7nm FinFET SRAMマクロ【Powered by NICT】
12.2 A 7nm FinFET SRAM macro using EUV lithography for peripheral repair analysis
著者 (23件):
Song Taejoong
(Samsung Electronics, Hwasung, Korea)
,
Kim Hoonki
(Samsung Electronics, Hwasung, Korea)
,
Rim Woojin
(Samsung Electronics, Hwasung, Korea)
,
Kim Yongho
(Samsung Electronics, Hwasung, Korea)
,
Park Sunghyun
(Samsung Electronics, Hwasung, Korea)
,
Park Changnam
(Samsung Electronics, Hwasung, Korea)
,
Hong Minsun
(Samsung Electronics, Hwasung, Korea)
,
Yang Giyong
(Samsung Electronics, Hwasung, Korea)
,
Do Jeongho
(Samsung Electronics, Hwasung, Korea)
,
Lim Jinyoung
(Samsung Electronics, Hwasung, Korea)
,
Lee Seungyoung
(Samsung Electronics, Hwasung, Korea)
,
Kim Ingyum
(Samsung Electronics, Hwasung, Korea)
,
Baek Sanghoon
(Samsung Electronics, Hwasung, Korea)
,
Jung Jonghoon
(Samsung Electronics, Hwasung, Korea)
,
Ha Daewon
(Samsung Electronics, Hwasung, Korea)
,
Jang Hyungsoon
(Samsung Electronics, Hwasung, Korea)
,
Lee Taejung
(Samsung Electronics, Hwasung, Korea)
,
Park Chul-Hong
(Samsung Electronics, Hwasung, Korea)
,
Kwon Bongjae
(Samsung Electronics, Hwasung, Korea)
,
Jung Hyuntaek
(Samsung Electronics, Hwasung, Korea)
,
Cho Sungwee
(Samsung Electronics, Hwasung, Korea)
,
Choo Yongjae
(Samsung Electronics, Hwasung, Korea)
,
Choi JaeSeung
(Samsung Electronics, Hwasung, Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ISSCC
ページ:
208-209
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)