文献
J-GLOBAL ID:201702265283008433
整理番号:17A0475068
X線近吸収端構造分光法により決定したF注入GeにおけるF_6V_2錯体の生成【Powered by NICT】
Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy
著者 (6件):
Sanson A.
(Department of Physics and Astronomy, University of Padova and CNR-IMM Matis, Padova, Italy)
,
El Mubarek H.A.W.
(School of Electrical and Electronic Engineering, University of Manchester, Manchester, United Kingdom)
,
Gandy A.S.
(Department of Materials Science and Engineering, University of Sheffield, Sheffield, United Kingdom)
,
De Salvador D.
(Department of Physics and Astronomy, University of Padova and CNR-IMM Matis, Padova, Italy)
,
Napolitani E.
(Department of Physics and Astronomy, University of Padova and CNR-IMM Matis, Padova, Italy)
,
Carnera A.
(Department of Physics and Astronomy, University of Padova and CNR-IMM Matis, Padova, Italy)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
62
ページ:
205-208
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)