文献
J-GLOBAL ID:201702265556441153
整理番号:17A0697412
水素化物気相エピタクシーによるナノピラー/パターンSiO_2上に成長させたAlNの構造的および光学的性質【Powered by NICT】
Structural and optical properties of AlN grown on nanopillar/patterned SiO2 by hydride vapor phase epitaxy
著者 (6件):
Son Hoki
(Korea Institute of Ceramic Engineering & Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea)
,
Lee YoungJin
(Korea Institute of Ceramic Engineering & Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea)
,
Kim Jin-Ho
(Korea Institute of Ceramic Engineering & Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea)
,
Hwang Jonghee
(Korea Institute of Ceramic Engineering & Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea)
,
Kim Seung Hwan
(Metamaterial Electronic Device Research Center, Hongik University, Seoul 121-791, Republic of Korea)
,
Jeon Dae-Woo
(Korea Institute of Ceramic Engineering & Technology, 15-5, Chungmugong-dong, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
626
ページ:
66-69
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)