文献
J-GLOBAL ID:201702265581921846
整理番号:17A1645826
低漏れ電流と急峻なサブしきい値傾斜のための表面不動態化を用いたHEMTデバイスの開発【Powered by NICT】
Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope
著者 (6件):
Priya Anushruti
(Department of Electronics and Communication Engineering, Birla Institute of Technology (Deemed University), Mesra, Ranchi, Jharkhand - 835215)
,
Moonka Shreya
(Department of Electronics and Communication Engineering, Birla Institute of Technology (Deemed University), Mesra, Ranchi, Jharkhand - 835215)
,
Chitransh Akshat
(Department of Electronics and Communication Engineering, Birla Institute of Technology (Deemed University), Mesra, Ranchi, Jharkhand - 835215)
,
Prasad Santashraya
(Department of Electronics and Communication Engineering, Birla Institute of Technology (Deemed University), Mesra, Ranchi, Jharkhand - 835215)
,
Sengupta Anumita
(Department of Electronics and Communication Engineering, Birla Institute of Technology (Deemed University), Mesra, Ranchi, Jharkhand - 835215)
,
Islam Aminul
(Department of Electronics and Communication Engineering, Birla Institute of Technology (Deemed University), Mesra, Ranchi, Jharkhand - 835215)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
DevIC
ページ:
364-367
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)