文献
J-GLOBAL ID:201702265640148650
整理番号:17A0886823
シリコンナノワイヤISFETセンサの信号対雑音比の最適化【Powered by NICT】
Optimization of Signal to Noise Ratio in Silicon Nanowire ISFET Sensors
著者 (6件):
Cho Hyeonsu
(Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Kim Kihyun
(Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Yoon Jun-Sik
(Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Rim Taiuk
(Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang, South Korea)
,
Meyyappan M.
(NASA Ames Research Center, Moffett Field, CA, USA)
,
Baek Chang-Ki
(Department of Creative IT Engineering and Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea)
資料名:
IEEE Sensors Journal
(IEEE Sensors Journal)
巻:
17
号:
9
ページ:
2792-2796
発行年:
2017年
JST資料番号:
W1318A
ISSN:
1530-437X
CODEN:
ISJEAZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)