文献
J-GLOBAL ID:201702265653231964
整理番号:17A1650319
電流注入デュアルゲートグラフェンチャネルFETに基づいたテラヘルツ発光トランジスタ【Powered by NICT】
Terahertz light emitting transistor based on current injection dualgate graphene-channel FET
著者 (10件):
Yadav Deepika
(Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan)
,
Tobah Youssef
(Department of Electrical and Computer Engineering, University of Texas at Austin, Austin 78712, Texas, USA)
,
Sugawara Kenta
(Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan)
,
Mitsushio Junki
(Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan)
,
Tamamushi Gen
(Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan)
,
Watanabe Takayuki
(Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan)
,
Dubinov Alexander A.
(Institute for Physics of Microstructures, RAS, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod 603950, Russia)
,
Ryzhii Maxim
(Department of Computer Science and Engineering, University of Aizu, Aizu-Wakamatsu 965-8580, Japan)
,
Ryzhii Victor
(Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan)
,
Otsuji Taiichi
(Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
IRMMW-THz
ページ:
1-2
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)