文献
J-GLOBAL ID:201702265958020114
整理番号:17A0749545
エピタクシーによる高異方性半導体GaTeナノ材料及び新たな特性可能の合成【Powered by NICT】
Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy
著者 (10件):
Cai Hui
(School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA)
,
Chen Bin
(School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA)
,
Wang Gang
(Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France)
,
Soignard Emmanuel
(LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA)
,
Khosravi Afsaneh
(School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA)
,
Manca Marco
(Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France)
,
Marie Xavier
(Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France)
,
Chang Shery L. Y.
(LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA)
,
Urbaszek Bernhard
(Universite de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France)
,
Tongay Sefaattin
(School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA)
資料名:
Advanced Materials
(Advanced Materials)
巻:
29
号:
8
ページ:
ROMBUNNO.201605551
発行年:
2017年
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)