文献
J-GLOBAL ID:201702266064338213
整理番号:17A0831345
フェムト秒レーザ照射下での硫黄ドープシリコンの広帯域赤外応答【Powered by NICT】
Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation
著者 (10件):
Zhang Ting
(School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China)
,
Ahmad Waseem
(School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China)
,
Liu Bohan
(School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China)
,
Xuan Yaoyu
(School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China)
,
Ying Xiangxiao
(School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China)
,
Liu Zhijun
(School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China)
,
Li Yuankai
(The Second Research Institute of CAAC, Chengdu, Sichuan 610041, China)
,
Chen Zhi
(School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China)
,
Chen Zhi
(Department of Electrical & Computer Engineering and Center for Nanoscale Science & Engineering, University of Kentucky, Lexington, KY 40506, USA)
,
Li Shibin
(School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China)
資料名:
Materials Letters
(Materials Letters)
巻:
196
ページ:
16-19
発行年:
2017年
JST資料番号:
E0935A
ISSN:
0167-577X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)