文献
J-GLOBAL ID:201702266269447244
整理番号:17A0759464
4H-SiC垂直JFETの動作に及ぼすチャネル幅の効果【Powered by NICT】
Channel width effect on the operation of 4H-SiC vertical JFETs
著者 (8件):
Vamvoukakis K.
(MRG-IESL/FORTH, Vassilika Vouton, PO Box 1385, Heraklion, Greece)
,
Stefanakis D.
(MRG-IESL/FORTH, Vassilika Vouton, PO Box 1385, Heraklion, Greece)
,
Stavrinidis A.
(MRG-IESL/FORTH, Vassilika Vouton, PO Box 1385, Heraklion, Greece)
,
Vassilevski K.
(School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU, UK)
,
Konstantinidis G.
(MRG-IESL/FORTH, Vassilika Vouton, PO Box 1385, Heraklion, Greece)
,
Kayambaki M.
(MRG-IESL/FORTH, Vassilika Vouton, PO Box 1385, Heraklion, Greece)
,
Zekentes K.
(MRG-IESL/FORTH, Vassilika Vouton, PO Box 1385, Heraklion, Greece)
,
Zekentes K.
(Universite Grenoble Alpes, IMEP-LAHC, 38000, Grenoble, France)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
4
ページ:
ROMBUNNO.201600452
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)