文献
J-GLOBAL ID:201702266352941793
整理番号:17A1482946
分子ビームエピタクシーシステムを用いたSフラックスの同時蒸着とそれに続くアニーリングによるCu_2ZnSnS_4形成【Powered by NICT】
Cu2ZnSnS4 formation by co-evaporation and subsequent annealing in S-flux using molecular beam epitaxy system
著者 (6件):
Shimamune Yosuke
(National Institute of Technology, Nagaoka College, 888 Nishikatakai, Nagaoka, Niigata 940-8532, Japan)
,
Jimbo Kazuo
(National Institute of Technology, Nagaoka College, 888 Nishikatakai, Nagaoka, Niigata 940-8532, Japan)
,
Nishida Genki
(National Institute of Technology, Nagaoka College, 888 Nishikatakai, Nagaoka, Niigata 940-8532, Japan)
,
Murayama Masanari
(National Institute of Technology, Nagaoka College, 888 Nishikatakai, Nagaoka, Niigata 940-8532, Japan)
,
Takeuchi Akiko
(National Institute of Technology, Nagaoka College, 888 Nishikatakai, Nagaoka, Niigata 940-8532, Japan)
,
Katagiri Hironori
(National Institute of Technology, Nagaoka College, 888 Nishikatakai, Nagaoka, Niigata 940-8532, Japan)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
638
ページ:
312-317
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)