文献
J-GLOBAL ID:201702266463965370
整理番号:17A0852278
デバイス特性の向上のためのドーピングのないsuperトンネルFETの新しい設計法【Powered by NICT】
A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics
著者 (4件):
Raad Bhagwan Ram
(Nanoelectronics and VLSI Laboratory, Electronics and Communication Engineering Discipline, Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India)
,
Tirkey Sukeshni
(Nanoelectronics and VLSI Laboratory, Electronics and Communication Engineering Discipline, Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India)
,
Sharma Dheeraj
(Nanoelectronics and VLSI Laboratory, Electronics and Communication Engineering Discipline, Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India)
,
Kondekar Pravin
(Nanoelectronics and VLSI Laboratory, Electronics and Communication Engineering Discipline, Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
4
ページ:
1830-1836
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)