文献
J-GLOBAL ID:201702266945381329
整理番号:17A1617480
β-Ga2O3薄膜に基づく光検出器の厚み調整光電特性
Thickness Tuning Photoelectric Properties of β-Ga2O3 Thin Film Based Photodetectors
著者 (8件):
AN Y.H.
(Beijing Univ. Posts and Telecommunications, Beijing, CHN)
,
ZHI Y.S.
(Beijing Univ. Posts and Telecommunications, Beijing, CHN)
,
CUI W.
(Beijing Univ. Posts and Telecommunications, Beijing, CHN)
,
ZHAO X.L.
(Beijing Univ. Posts and Telecommunications, Beijing, CHN)
,
WU Z.P.
(Beijing Univ. Posts and Telecommunications, Beijing, CHN)
,
GUO D.Y.
(Beijing Univ. Posts and Telecommunications, Beijing, CHN)
,
LI P.G.
(Beijing Univ. Posts and Telecommunications, Beijing, CHN)
,
TANG W.H.
(Beijing Univ. Posts and Telecommunications, Beijing, CHN)
資料名:
Journal of Nanoscience and Nanotechnology
(Journal of Nanoscience and Nanotechnology)
巻:
17
号:
12
ページ:
9091-9094
発行年:
2017年12月
JST資料番号:
W1351A
ISSN:
1533-4880
CODEN:
JNNOAR
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)