文献
J-GLOBAL ID:201702266973159857
整理番号:17A1646264
高マイクロ波性能とロバスト性のためのGaNH EMTにおけるバッファ配置の重要性【Powered by NICT】
Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness
著者 (7件):
Pecheux R.
(IEMN - CNRS, Institute of Electronics, Microelectronics and Nanotechnology, UMR8520 Av. Poincare ́, 59650 Villeneuve d’Ascq, France)
,
Kabouche R.
(IEMN - CNRS, Institute of Electronics, Microelectronics and Nanotechnology, UMR8520 Av. Poincare ́, 59650 Villeneuve d’Ascq, France)
,
Dogmus E.
(IEMN - CNRS, Institute of Electronics, Microelectronics and Nanotechnology, UMR8520 Av. Poincare ́, 59650 Villeneuve d’Ascq, France)
,
Linge A.
(IEMN - CNRS, Institute of Electronics, Microelectronics and Nanotechnology, UMR8520 Av. Poincare ́, 59650 Villeneuve d’Ascq, France)
,
Okada E.
(IEMN - CNRS, Institute of Electronics, Microelectronics and Nanotechnology, UMR8520 Av. Poincare ́, 59650 Villeneuve d’Ascq, France)
,
Zegaoui M.
(IEMN - CNRS, Institute of Electronics, Microelectronics and Nanotechnology, UMR8520 Av. Poincare ́, 59650 Villeneuve d’Ascq, France)
,
Medjdoub F.
(IEMN - CNRS, Institute of Electronics, Microelectronics and Nanotechnology, UMR8520 Av. Poincare ́, 59650 Villeneuve d’Ascq, France)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ESSDERC
ページ:
228-231
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)