文献
J-GLOBAL ID:201702266987374973
整理番号:17A0206051
ZnOに基づくメムリスタの抵抗スイッチング特性に及ぼすキャリア濃度の影響【Powered by NICT】
Influence of carrier concentration on the resistive switching characteristics of a ZnO-based memristor
著者 (6件):
Sun Yihui
(School of Materials Science and Engineering, University of Science and Technology Beijing)
,
Yan Xiaoqin
(School of Materials Science and Engineering, University of Science and Technology Beijing)
,
Zheng Xin
(School of Materials Science and Engineering, University of Science and Technology Beijing)
,
Liu Yichong
(School of Materials Science and Engineering, University of Science and Technology Beijing)
,
Shen Yanwei
(School of Materials Science and Engineering, University of Science and Technology Beijing)
,
Zhang Yue
(School of Materials Science and Engineering, University of Science and Technology Beijing)
資料名:
Nami Yanjiu
(Nami Yanjiu)
巻:
9
号:
4
ページ:
1116-1124
発行年:
2016年
JST資料番号:
C2652A
ISSN:
1998-0124
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)