文献
J-GLOBAL ID:201702267378183349
整理番号:17A0375780
化学的沈殿を用いた半導体廃水からのふっ化物,アンモニア態窒素及びりん酸塩の同時除去に関する研究【Powered by NICT】
Investigation on the simultaneous removal of fluoride, ammonia nitrogen and phosphate from semiconductor wastewater using chemical precipitation
著者 (5件):
Huang Haiming
(Hebei Key Laboratory of Applied Chemistry, School of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, PR China)
,
Liu Jiahui
(Hebei Key Laboratory of Applied Chemistry, School of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, PR China)
,
Zhang Peng
(Hebei Key Laboratory of Applied Chemistry, School of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, PR China)
,
Zhang Dingding
(Hebei Key Laboratory of Applied Chemistry, School of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, PR China)
,
Gao Faming
(Hebei Key Laboratory of Applied Chemistry, School of Environmental and Chemical Engineering, Yanshan University, Qinhuangdao 066004, PR China)
資料名:
Chemical Engineering Journal
(Chemical Engineering Journal)
巻:
307
ページ:
696-706
発行年:
2017年
JST資料番号:
D0723A
ISSN:
1385-8947
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)