文献
J-GLOBAL ID:201702267750165001
整理番号:17A1570641
プロセスと供給電圧非感受性デッドゾーンを用いた改良型リング増幅器【Powered by NICT】
An improved ring amplifier with process- and supply voltage-insensitive dead-zone
著者 (5件):
Cao Yuefeng
(State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China)
,
Chen Yongzhen
(State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China)
,
Zhang Tianli
(State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China)
,
Ye Fan
(State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China)
,
Ren Junyan
(State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
MWSCAS
ページ:
811-814
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)