文献
J-GLOBAL ID:201702267814542535
整理番号:17A1391785
圧力接触を用いたSiC Schottkyダイオードの評価【Powered by NICT】
Evaluation of SiC Schottky Diodes Using Pressure Contacts
著者 (8件):
Ortiz Gonzalez Jose
(School of Engineering, University of Warwick, Coventry, U.K.)
,
Alatise Olayiwola
(School of Engineering, University of Warwick, Coventry, U.K.)
,
Aliyu Attahir Murtala
(Power Electronics, Machines and Control Group, University of Nottingham, Nottingham, U.K.)
,
Rajaguru Pushparajah
(Computational Mechanics and Reliability Group, University of Greenwich, London, U.K.)
,
Castellazzi Alberto
(Power Electronics, Machines and Control Group, University of Nottingham, Nottingham, U.K.)
,
Ran Li
(School of Engineering, University of Warwick, Coventry, U.K.)
,
Mawby Philip A.
(School of Engineering, University of Warwick, Coventry, U.K.)
,
Bailey Chris
(Computational Mechanics and Reliability Group, University of Greenwich, London, U.K.)
資料名:
IEEE Transactions on Industrial Electronics
(IEEE Transactions on Industrial Electronics)
巻:
64
号:
10
ページ:
8213-8223
発行年:
2017年
JST資料番号:
C0234A
ISSN:
0278-0046
CODEN:
ITIED6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)