文献
J-GLOBAL ID:201702267991788580
整理番号:17A0385773
MoS2量子ドットに基づく不揮発性抵抗メモリ素子の量子コンダクタンス
Quantum conductance in MoS2 quantum dots-based nonvolatile resistive memory device
著者 (6件):
Wang Dongliang
(Guangdong Provincial Key Laboratory of Nanophotonic Functional materials and Devices, Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China)
,
Ji Fengzhen
(Guangdong Provincial Key Laboratory of Nanophotonic Functional materials and Devices, Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China)
,
Chen Xinman
(Guangdong Provincial Key Laboratory of Nanophotonic Functional materials and Devices, Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China)
,
Li Yan
(Guangdong Provincial Key Laboratory of Nanophotonic Functional materials and Devices, Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China)
,
Ding Baofu
(Guangdong Provincial Key Laboratory of Nanophotonic Functional materials and Devices, Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China)
,
Zhang Yong
(Guangdong Provincial Key Laboratory of Nanophotonic Functional materials and Devices, Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
9
ページ:
093501-093501-5
発行年:
2017年02月27日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)