文献
J-GLOBAL ID:201702268281355505
整理番号:17A0407380
高温アニーリング後のSi上のYbをドープしたZnO薄膜からの強い紫外フォトルミネセンス発光【Powered by NICT】
Intense ultraviolet photoluminescent emission from Yb doped ZnO thin films on Si after high temperature annealing
著者 (8件):
Heng C.L.
(Key Laboratory of Cluster Science of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, PR China)
,
Wang T.
(Key Laboratory of Cluster Science of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, PR China)
,
Su W.Y.
(Key Laboratory of Cluster Science of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, PR China)
,
Wu H.C.
(Key Laboratory of Cluster Science of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, PR China)
,
Yang M.C.
(Key Laboratory of Cluster Science of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, PR China)
,
Deng L.G.
(Key Laboratory of Cluster Science of Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, PR China)
,
Yin P.G.
(Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry and Environment, Beihang University, Beijing, 100191, PR China)
,
Finstad T.G.
(Physics Department, University of Oslo, PO Box 1048, Blindern, N-0316, Oslo, Norway)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
695
ページ:
2232-2237
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)