文献
J-GLOBAL ID:201702268340171092
整理番号:17A1501857
歪み工学による制御された単分子層ReSe_2におけるカチオン欠陥に誘起された磁性【Powered by NICT】
Magnetism induced by cationic defect in monolayer ReSe2 controlled by strain engineering
著者 (7件):
Meng M.
(School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou, Henan 466001, PR China)
,
Shi C.G.
(College of Chemistry and Chemical Engineering, Nantong University, Nantong 226019, PR China)
,
Li T.
(College of Electronic Engineering, Guangxi Normal University, Guilin 541004, PR China)
,
Shi S.E.
(School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou, Henan 466001, PR China)
,
Shi S.E.
(College of Electronic Engineering, Guangxi Normal University, Guilin 541004, PR China)
,
Li T.H.
(College of Electronic Engineering, Guangxi Normal University, Guilin 541004, PR China)
,
Liu L.Z.
(Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, PR China)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
425
ページ:
696-701
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)