文献
J-GLOBAL ID:201702268438513340
整理番号:17A0214304
コンパクトセル構造で実現した垂直MTJを用いた4Gビット密度STT-MRAM【Powered by NICT】
4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure
著者 (20件):
Chung S.-W.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Kishi T.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Park J. W.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Yoshikawa M.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Park K. S.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Nagase T.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Sunouchi K.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Kanaya H.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Kim G. C.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Noma K.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Lee M. S.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Yamamoto A.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Rho K. M.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Tsuchida K.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Chung S. J.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Yi J. Y.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Kim H. S.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Chun Y.S.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
,
Oyamatsu H.
(Toshiba Electronics Korea Corporation, Seoul, Korea)
,
Hong S. J.
(SK Hynix Inc., Icheon-si, Gyeonggi-do, Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
27.1.1-27.1.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)