文献
J-GLOBAL ID:201702268497009258
整理番号:17A0210943
4元化合物のIn0.05Al0.75Ga0.2Nから成るショットキー障壁層を有するGaN-HEMT
GaN HEMTs with quaternary In0.05Al0.75Ga0.2N Schottky barrier layer
著者 (5件):
Hwang Ji Hyun
(School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, 61005, Republic of Korea)
,
Kim Se-Mi
(School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, 61005, Republic of Korea)
,
Woo Jeong Min
(School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, 61005, Republic of Korea)
,
Hong Sung-Min
(School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, 61005, Republic of Korea)
,
Jang Jae-Hyung
(School of Information and Communications, Gwangju Institute of Science and Technology, 123 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, 61005, Republic of Korea)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
213
号:
4
ページ:
889-892
発行年:
2016年04月
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)