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J-GLOBAL ID:201702268540420130
整理番号:17A1357653
短チャネル二重ゲートMOSFETのしきい値電圧に及ぼすRDF効果の解析的モデリング【Powered by NICT】
Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs
著者 (7件):
Graef Michael
(Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany)
,
Hain Franziska
(Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany)
,
Hosenfeld Fabian
(Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany)
,
Horst Fabian
(Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany)
,
Farokhnejad Atieh
(Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany)
,
Iniguez Benjamin
(DEEEA, Universitat Rovira i Virgili, Tarragona, Spain)
,
Kloes Alexander
(Competence Centre for Nanotechnology and Photonics, Technische Hochschule Mittelhessen, Giessen, Germany)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
MIXDES
ページ:
127-131
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)