文献
J-GLOBAL ID:201702268601834925
整理番号:17A0375115
InGaPエピタクシーのためのオンインシュレータ仮想基板【Powered by NICT】
Germanium-on-insulator virtual substrate for InGaP epitaxy
著者 (15件):
Bao Shuyu
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Bao Shuyu
(School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore)
,
Lee Kwang Hong
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Wang Cong
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Wang Cong
(School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore)
,
Wang Bing
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Made Riko I.
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Yoon Soon Fatt
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Yoon Soon Fatt
(School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore)
,
Michel Jurgen
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Michel Jurgen
(Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA)
,
Fitzgerald Eugene
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Fitzgerald Eugene
(Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA)
,
Tan Chuan Seng
(Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #09-01/02 CREATE Tower, Singapore 138602, Singapore)
,
Tan Chuan Seng
(School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
58
ページ:
15-21
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)