文献
J-GLOBAL ID:201702268677543222
整理番号:17A1639029
遷移金属二カルコゲン化物に基づく二重ゲート無接合電界効果トランジスタの量子バリスティック解析とナノバイオセンサーへの応用【Powered by NICT】
Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor
著者 (3件):
Shadman Abir
(Dept. of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh)
,
Rahman Ehsanur
(Dept. of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh)
,
Khosru Quazi D.M.
(Dept. of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh)
資料名:
Superlattices and Microstructures
(Superlattices and Microstructures)
巻:
111
ページ:
414-422
発行年:
2017年
JST資料番号:
D0600B
ISSN:
0749-6036
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)