文献
J-GLOBAL ID:201702269139397621
整理番号:17A0214313
サブ0.2V応用のためのナノスケールFinFET技術におけるしきい値近傍設計への新たな洞察【Powered by NICT】
New insights into the near-threshold design in nanoscale FinFET technology for sub-0.2V applications
著者 (8件):
Jiang Xiaobo
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China)
,
Guo Shaofeng
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China)
,
Wang Runsheng
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China)
,
Wang Yuan
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China)
,
Wang Xingsheng
(Synopsys, 11 Somerset place, Glasgow G3 7JT, U.K.)
,
Cheng Binjie
(Synopsys, 11 Somerset place, Glasgow G3 7JT, U.K.)
,
Asenov Asen
(Synopsys, 11 Somerset place, Glasgow G3 7JT, U.K.)
,
Huang Ru
(Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
28.4.1-28.4.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)