前のページに戻る
この文献は全文を取り寄せることができます
JDreamⅢ複写サービスから文献全文の複写（冊子体のコピー）をお申込みできます。
ご利用には、G-Searchデータベースサービスまたは、JDreamⅢのIDが必要です。
ご利用には、G-Searchデータベースサービスまたは、JDreamⅢのIDが必要です。
既に、G-Searchデータベースサービスまたは、JDreamⅢのIDをお持ちの方
JDreamⅢ複写サービスのご利用が初めての方
取り寄せる文献のタイトルと詳細
文献
J-GLOBAL ID：201702269223945235
整理番号：17A1492136
4チャネル量子カスケードレーザの外部共振器ビーム結合【Powered by NICT】
External-cavity beam combining of 4-channel quantum cascade lasers
Zhao Yue
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Zhao Yue
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Zhang Jin-Chuan
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Zhang Jin-Chuan
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Zhou Yu-Hong
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Zhou Yu-Hong
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Jia Zhi-Wei
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Jia Zhi-Wei
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Zhuo Ning
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Zhuo Ning
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Zhai Shen-Qiang
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Zhai Shen-Qiang
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Wang Li-Jun
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Wang Li-Jun
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Liu Jun-Qi
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Liu Jun-Qi
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Liu Shu-Man
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Liu Shu-Man
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Liu Feng-Qi
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Liu Feng-Qi
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
,
Wang Zhan-Guo
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China)
,
Wang Zhan-Guo
(College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China)
資料名：
Infrared Physics & Technology
(Infrared Physics & Technology)
巻： 85 ページ： 52-55 発行年： 2017年
JST資料番号： H0184A ISSN： 1350-4495 資料種別： 逐次刊行物 (A)
記事区分： 原著論文 発行国： オランダ (NLD) 言語： 英語 (EN)
JDreamⅢ複写サービスとは
JDreamⅢ複写サービスは、学術文献の全文を複写（コピー）して取り寄せできる有料サービスです。インターネットに公開されていない文献や、図書館に収録されていない文献の全文を、オンラインで取り寄せることができます。J-GLOBALの整理番号にも対応しているので、申し込みも簡単にできます。全文の複写（コピー）は郵送またはFAXでお送りします
※ご利用には、G-Searchデータベースサービスまたは、JDreamⅢのIDが必要です
※初めてご利用される方は、JDreamⅢ複写サービスのご案内をご覧ください。
※ご利用には、G-Searchデータベースサービスまたは、JDreamⅢのIDが必要です
※初めてご利用される方は、JDreamⅢ複写サービスのご案内をご覧ください。