文献
J-GLOBAL ID:201702269276186653
整理番号:17A0013380
窒化ガリウム(GaN)/強誘電体薄膜MEMSおよび圧力センサ用のSiC,サファイア,ガラスおよびセラミックへのレーザアブレーションによる膜の製造
Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors
著者 (6件):
Zehetner J.
(Research Centre for Microtechnology, University of Applied Sciences, Dornbirn, Austria)
,
Kraus S.
(Department of Telecommunication Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Prague 6, Czech Republic)
,
Lucki M.
(Department of Telecommunication Engineering, Faculty of Electrical Engineering, Czech Technical University in Prague, Prague 6, Czech Republic)
,
Vanko G.
(Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia)
,
Dzuba J.
(Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia)
,
Lalinsky T.
(Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia)
資料名:
Microsystem Technologies
(Microsystem Technologies)
巻:
22
号:
7
ページ:
1883-1892
発行年:
2016年07月
JST資料番号:
W2056A
ISSN:
0946-7076
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)