文献
J-GLOBAL ID:201702269720241125
整理番号:17A1346125
InGaN/GaN青色発光ダイオードの逆方向漏れ電流のトンネルホッピング輸送モデル【Powered by NICT】
Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes
著者 (8件):
Zhao Linna
(Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications, Ministry of Education, Jiangnan University, Wuxi, China)
,
Chen Leilei
(Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications, Ministry of Education, Jiangnan University, Wuxi, China)
,
Yu Guohao
(Nano Fabrication Facility, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China)
,
Yan Dawei
(Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications, Ministry of Education, Jiangnan University, Wuxi, China)
,
Yang Guofeng
(Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications, Ministry of Education, Jiangnan University, Wuxi, China)
,
Gu Xiaofeng
(Department of Electronic Engineering, Engineering Research Center of IoT Technology Applications, Ministry of Education, Jiangnan University, Wuxi, China)
,
Liu Bin
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Lu Hai
(Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
29
号:
17
ページ:
1447-1450
発行年:
2017年
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)