文献
J-GLOBAL ID:201702269971205164
整理番号:17A0335435
有機金属化学気相成長法による変成AlGaInAsバッファを用いたGaAs基板上に成長させた高品質InPエピ層
High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition
著者 (7件):
SUN Yurun
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sci. (CAS), Suzhou, CHN)
,
DONG Jianrong
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sci. (CAS), Suzhou, CHN)
,
YU Shuzhen
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sci. (CAS), Suzhou, CHN)
,
ZHAO Yongming
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sci. (CAS), Suzhou, CHN)
,
ZHAO Yongming
(Univ. Chinese Acad. of Sci., Beijing, CHN)
,
HE Yang
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sci. (CAS), Suzhou, CHN)
,
HE Yang
(Univ. Chinese Acad. of Sci., Beijing, CHN)
資料名:
Journal of Materials Science. Materials in Electronics
(Journal of Materials Science. Materials in Electronics)
巻:
28
号:
1
ページ:
745-749
発行年:
2017年01月
JST資料番号:
W0003A
ISSN:
0957-4522
CODEN:
JMTSAS
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)