文献
J-GLOBAL ID:201702270206051097
整理番号:17A0400611
InPプラットフォーム上のInP AWGとInGaAsフォトダイオードのモノリシック集積化【Powered by NICT】
Monolithic integration of a InP AWG and InGaAs photodiodes on InP platform
著者 (7件):
Lv Qianqian
(State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China)
,
han Qin
(State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China)
,
Pan Pan
(State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China)
,
Pan Pan
(School of Physics and Electrical Engineering, Anqing Normal University, Anqing, Anhui Province 246133, China)
,
Ye Han
(State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China)
,
Yin Dongdong
(State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China)
,
Yang Xiaohong
(State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China)
資料名:
Optics & Laser Technology
(Optics & Laser Technology)
巻:
90
ページ:
122-127
発行年:
2017年
JST資料番号:
D0245B
ISSN:
0030-3992
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)