文献
J-GLOBAL ID:201702270568138873
整理番号:17A0204194
選択領域成長させたp-GaNゲートを用いたAlGaN/GaN高電子移動度トランジスタ【Powered by NICT】
AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates
著者 (9件):
Huang Yuliang
(Institute of Semiconductors, Chinese Academy of Sciences)
,
Zhang Lian
(Institute of Semiconductors, Chinese Academy of Sciences)
,
Cheng Zhe
(Institute of Semiconductors, Chinese Academy of Sciences)
,
Zhang Yun
(Institute of Semiconductors, Chinese Academy of Sciences)
,
Ai Yujie
(Institute of Semiconductors, Chinese Academy of Sciences)
,
Zhao Yongbing
(Institute of Semiconductors, Chinese Academy of Sciences)
,
Lu Hongxi
(Institute of Semiconductors, Chinese Academy of Sciences)
,
Wang Junxi
(Institute of Semiconductors, Chinese Academy of Sciences)
,
Li Jinmin
(Institute of Semiconductors, Chinese Academy of Sciences)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
37
号:
11
ページ:
114002-1-114002-5
発行年:
2016年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)