文献
J-GLOBAL ID:201702270594201012
整理番号:17A1764196
ハイドロフルオロカーボンプラズマエッチング中の表面反応に及ぼすシリコン窒化膜中の水素の影響
Influence of hydrogen in silicon nitride films on the surface reactions during hydrofluorocarbon plasma etching
著者 (7件):
Kuboi Nobuyuki
(Devices Development Division, Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan)
,
Tatsumi Tetsuya
(Research Division, Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan)
,
Minari Hideki
(Devices Development Division, Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan)
,
Fukasawa Masanaga
(Research Division, Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan)
,
Zaizen Yoshifumi
(Research Division, Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan)
,
Komachi Jun
(Devices Development Division, Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan)
,
Kawamura Takahiro
(Devices Development Division, Sony Semiconductor Solutions Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan)
資料名:
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films
(Journal of Vacuum Science & Technology. A. Vacuum, Surfaces and Films)
巻:
35
号:
6
ページ:
061306-061306-15
発行年:
2017年11月
JST資料番号:
C0789B
ISSN:
0734-2101
CODEN:
JVTAD6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)