文献
J-GLOBAL ID:201702270863853219
整理番号:17A0750112
不動態化裏面接触トンネル酸化物を用いたスクリーン印刷前面接合CZシリコン太陽電池の可能性モデル化【Powered by NICT】
Modeling the potential of screen printed front junction CZ silicon solar cell with tunnel oxide passivated back contact
著者 (9件):
Chen Chia-Wei
(Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, GA, 30332-0250, USA)
,
Hermle Martin
(Fraunhofer Institute for Solar Energy Systems, Germany)
,
Benick Jan
(Fraunhofer Institute for Solar Energy Systems, Germany)
,
Tao Yuguo
(Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, GA, 30332-0250, USA)
,
Ok Young-Woo
(Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, GA, 30332-0250, USA)
,
Upadhyaya Ajay
(Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, GA, 30332-0250, USA)
,
Tam Andrew M.
(Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, GA, 30332-0250, USA)
,
Rohatgi Ajeet
(Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, GA, 30332-0250, USA)
,
Rohatgi Ajeet
(Suniva Inc., 5765 Peachtree Industrial Blvd., Norcross, GA, 30092, USA)
資料名:
Progress in Photovoltaics
(Progress in Photovoltaics)
巻:
25
号:
1
ページ:
49-57
発行年:
2017年
JST資料番号:
W0463A
ISSN:
1062-7995
CODEN:
PPHOED
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)