文献
J-GLOBAL ID:201702271255253464
整理番号:17A0830906
埋込みゲートAlGaN/GaN高電子移動度トランジスタの性能に及ぼす水酸化テトラメチルアンモニウム処理の影響【Powered by NICT】
The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors
著者 (14件):
Do Jae-Won
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Jung Hyun-Wook
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Shin Min Jeong
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Ahn Ho-Kyun
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Kim Haecheon
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Kim Ryun-Hwi
(School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea)
,
Cho Kyu Jun
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Chang Sung-Jae
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Min Byoung-Gue
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Yoon Hyung Sup
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
,
Kim Ji-Heon
(Agency for Defense Development, Daejeon 34186, Republic of Korea)
,
Yang Jin-Mo
(Agency for Defense Development, Daejeon 34186, Republic of Korea)
,
Lee Jung-Hee
(School of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of Korea)
,
Lim Jong-Won
(Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
628
ページ:
31-35
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)