前のページに戻るこの文献は全文を取り寄せることができます

JDreamⅢ複写サービスから文献全文の複写（冊子体のコピー）をお申込みできます。
ご利用には、G-Searchデータベースサービスまたは、JDreamⅢのIDが必要です。

既に、G-Searchデータベースサービスまたは、JDreamⅢのIDをお持ちの方

JDreamⅢ複写サービス
文献複写のお申込み

JDreamⅢ複写サービスのご利用が初めての方

学術文献の全文複写をお取寄せ
JDreamⅢ複写サービスのご案内

取り寄せる文献のタイトルと詳細

文献

J-GLOBAL ID：201702271632797930 整理番号：17A0313246

相変化メモリのための誘導結合BCl_3/Arプラズマ中の相変化材料GeTeのエッチング特性【Powered by NICT】

Etching characteristics of phase change material GeTe in inductively coupled BCl₃/Ar plasma for phase change memory

著者 (30件)：

Xia Yangyang

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Xia Yangyang

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Xia Yangyang

(University of the Chinese Academy of Sciences, Beijing 100049, China)

,

Liu Bo

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Liu Bo

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Wang Qing

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Wang Qing

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Wang Qing

(University of the Chinese Academy of Sciences, Beijing 100049, China)

,

Zhang Zhonghua

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Zhang Zhonghua

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Zhang Zhonghua

(University of the Chinese Academy of Sciences, Beijing 100049, China)

,

Li Shasha

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Li Shasha

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Li Shasha

(University of the Chinese Academy of Sciences, Beijing 100049, China)

,

Zheng Yonghui

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Zheng Yonghui

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Zheng Yonghui

(University of the Chinese Academy of Sciences, Beijing 100049, China)

,

Li Le

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Li Le

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Li Le

(University of the Chinese Academy of Sciences, Beijing 100049, China)

,

Song Sannian

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Song Sannian

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Yin Weijun

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Yin Weijun

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Yao Dongning

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Yao Dongning

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Song Zhitang

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Song Zhitang

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

,

Feng Songlin

(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

,

Feng Songlin

(Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China)

資料名：

Microelectronic Engineering (Microelectronic Engineering)

巻： 161 ページ： 69-73 発行年： 2016年08月01日
JST資料番号： C0406B ISSN： 0167-9317 CODEN： MIENEF 資料種別：逐次刊行物 (A)
記事区分：原著論文発行国：オランダ (NLD) 言語：英語 (EN)

JDreamⅢ複写サービスとは

JDreamⅢ複写サービスは、学術文献の全文を複写（コピー）して取り寄せできる有料サービスです。インターネットに公開されていない文献や、図書館に収録されていない文献の全文を、オンラインで取り寄せることができます。J-GLOBALの整理番号にも対応しているので、申し込みも簡単にできます。全文の複写（コピー）は郵送またはFAXでお送りします

※ご利用には、G-Searchデータベースサービスまたは、JDreamⅢのIDが必要です
※初めてご利用される方は、JDreamⅢ複写サービスのご案内をご覧ください。

TOP

BOTTOM