文献
J-GLOBAL ID:201702271966267158
整理番号:17A0402519
フィラメント補助CVDにより蒸着した低κ誘電体を用いた高アスペクト比TSVの共形単離【Powered by NICT】
Conformal isolation of high-aspect-ratio TSVs using a low-κ dielectric deposited by filament-assisted CVD
著者 (15件):
Jousseaume V.
(Univ. Grenoble Alpes, F-38000 Grenoble, France)
,
Jousseaume V.
(CEA, LETI, MINATEC Campus, F-38054 Grenoble, France)
,
Altemus B.
(US-Technology Development Center, TEL Technology Center, America, LLC, 255 Fuller Road, Suite 214, Albany, NY 12203, USA)
,
Ribiere C.
(Univ. Grenoble Alpes, F-38000 Grenoble, France)
,
Ribiere C.
(CEA, LETI, MINATEC Campus, F-38054 Grenoble, France)
,
Minoret S.
(Univ. Grenoble Alpes, F-38000 Grenoble, France)
,
Minoret S.
(CEA, LETI, MINATEC Campus, F-38054 Grenoble, France)
,
Gottardi M.
(Univ. Grenoble Alpes, F-38000 Grenoble, France)
,
Gottardi M.
(CEA, LETI, MINATEC Campus, F-38054 Grenoble, France)
,
Ratin C.
(Univ. Grenoble Alpes, F-38000 Grenoble, France)
,
Ratin C.
(CEA, LETI, MINATEC Campus, F-38054 Grenoble, France)
,
Ichiki K.
(US-Technology Development Center, TEL Technology Center, America, LLC, 255 Fuller Road, Suite 214, Albany, NY 12203, USA)
,
Mourier T.
(Univ. Grenoble Alpes, F-38000 Grenoble, France)
,
Mourier T.
(CEA, LETI, MINATEC Campus, F-38054 Grenoble, France)
,
Faguet J.
(US-Technology Development Center, TEL Technology Center, America, LLC, 2400 Grove Blvd., Austin, TX 78741, USA)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
167
ページ:
80-84
発行年:
2017年
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)