文献
J-GLOBAL ID:201702272077100509
整理番号:17A0343850
テラヘルツ分光法による半絶縁GaAsの光-電気特性とキャリア動力学【Powered by NICT】
Optical-Electrical Characteristics and Carrier Dynamics of Semi-Insulation GaAs by Terahertz Spectroscopic Technique
著者 (6件):
Han Xiaowei
(Department of Applied Physics, Xi’an University of Technology)
,
Hou Lei
(Department of Applied Physics, Xi’an University of Technology)
,
Yang Lei
(Department of Applied Physics, Xi’an University of Technology)
,
Wang Zhiquan
(Department of Applied Physics, Xi’an University of Technology)
,
Zhao Mengmeng
(Department of Applied Physics, Xi’an University of Technology)
,
Shi Wei
(Department of Applied Physics, Xi’an University of Technology)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
33
号:
12
ページ:
120701-1-120701-5
発行年:
2016年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)