文献
J-GLOBAL ID:201702272191565364
整理番号:17A0885724
Schottky特性法によるGaN系トランジスタの熱輸送挙動の研究【Powered by NICT】
Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method
著者 (7件):
Zhang Yamin
(Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China)
,
Feng Shiwei
(Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China)
,
Zhu Hui
(Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China)
,
Guo Chunsheng
(Laboratory of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China)
,
Qiao Yanbin
(Beijing Nari Smart-Chip Microelectronics Technology Company, Ltd., Beijing, China)
,
Shao Jin
(Beijing Nari Smart-Chip Microelectronics Technology Company, Ltd., Beijing, China)
,
Han Xiaodong
(Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
5
ページ:
2166-2171
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)