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J-GLOBAL ID：201702272800472603 整理番号：17A0754799

48積層WL層を持つ256Gb3b/Cell V NANDフラッシュメモリ【Powered by NICT】

256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers

著者 (29件)：

Kang Dongku

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Jeong Woopyo

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kim Chulbum

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kim Doo-Hyun

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Cho Yong Sung

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kang Kyung-Tae

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Ryu Jinho

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kang Kyung-Min

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Lee SungYeon

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kim Wandong

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Lee Hanjun

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Yu Jaedoeg

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Choi Nayoung

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Jang Dong-Su

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Lee Cheon An

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Min Young-Sun

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kim Moo-Sung

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Park An-Soo

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Son Jae-Ick

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kim In-Mo

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kwak Pansuk

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Jung Bong-Kil

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Lee Doo-Sub

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kim Hyunggon

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Ihm Jeong-Don

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Byeon Dae-Seok

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Lee Jin-Yup

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Park Ki-Tae

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

,

Kyung Kye-Hyun

(Flash Product and Technology, Memory Business, Samsung Electronics Company Ltd., Hwaseong, South Korea)

資料名：

IEEE Journal of Solid-State Circuits (IEEE Journal of Solid-State Circuits)

巻： 52 号： 1 ページ： 210-217 発行年： 2017年
JST資料番号： B0761A ISSN： 0018-9200 CODEN： IJSCBC 資料種別：逐次刊行物 (A)
記事区分：原著論文発行国：アメリカ合衆国 (USA) 言語：英語 (EN)

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