文献
J-GLOBAL ID:201702272932645810
整理番号:17A0993730
SOIモノリシックICのための新しい高電圧相互接続遮蔽法【Powered by NICT】
A new high-voltage interconnection shielding method for SOI monolithic ICs
著者 (10件):
Zhang Long
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
,
Zhu Jing
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
,
Sun Weifeng
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
,
Sun Weifeng
(Collaborative Innovation Center of IC Design and Manufacturing of Yangtze River Delta, Shanghai 200433, China)
,
Huang Xuequan
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
,
Zhao Minna
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
,
Chen Jiajun
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
,
Shi Longxing
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
,
Chen Jian
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
,
Ding Desheng
(National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
133
ページ:
25-30
発行年:
2017年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)