文献
J-GLOBAL ID:201702273021836720
整理番号:17A0352476
T型フィールドプレートを用いたAlGaN/GaNH EMTにおける電場と破壊性能の調節機構の解析【Powered by NICT】
Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate
著者 (9件):
Mao Wei
(School of Microelectronics, Xidian University)
,
Fan Jusheng
(School of Microelectronics, Xidian University)
,
Du Ming
(School of Microelectronics, Xidian University)
,
Zhang Jinfeng
(School of Microelectronics, Xidian University)
,
Zheng Xuefeng
(School of Microelectronics, Xidian University)
,
Wang Chong
(School of Microelectronics, Xidian University)
,
Ma Xiaohua
(School of Microelectronics, Xidian University)
,
Zhang Jincheng
(School of Microelectronics, Xidian University)
,
Hao Yue
(School of Microelectronics, Xidian University)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
12
ページ:
127305-1-127305-5
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)