文献
J-GLOBAL ID:201702273101009436
整理番号:17A0132856
半極性AlGaN/GaN量子井戸のサブバンド間遷移特性への変調ドーピング効果の理論解析
Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well
著者 (5件):
Fu Houqiang
(School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA)
,
Chen Hong
(School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA)
,
Huang Xuanqi
(School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA)
,
Lu Zhijian
(School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA)
,
Zhao Yuji
(School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
121
号:
1
ページ:
014501-014501-9
発行年:
2017年01月07日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)