文献
J-GLOBAL ID:201702273777521023
整理番号:17A0204215
マイクロ波GaNH EMTの改善された温度依存大信号モデル【Powered by NICT】
An improved temperature-dependent large signal model of microwave GaN HEMTs
著者 (5件):
Wang Changsi
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China)
,
Xu Yuehang
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China)
,
Wen Zhang
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China)
,
Chen Zhikai
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China)
,
Xu Ruimin
(EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
37
号:
7
ページ:
074006-1-074006-8
発行年:
2016年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)