文献
J-GLOBAL ID:201702273780124152
整理番号:17A1250287
「漏れ誘電」炭素ドープAlGaN/GaNH EMTにおける動的R_ONの抑制のためのモデル【Powered by NICT】
“Leaky Dielectric” Model for the Suppression of Dynamic $R_{¥mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs
著者 (7件):
Uren Michael J.
(Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, U.K.)
,
Karboyan Serge
(Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, U.K.)
,
Chatterjee Indranil
(CDTR, University of Bristol, Bristol, U.K.)
,
Pooth Alexander
(Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, U.K.)
,
Moens Peter
(ON Semiconductor, Oudenaarde, Belgium)
,
Banerjee Abhishek
(ON Semiconductor, Oudenaarde, Belgium)
,
Kuball Martin
(Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Bristol, U.K.)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
7
ページ:
2826-2834
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)