文献
J-GLOBAL ID:201702273834269920
整理番号:17A1774267
大面積(150mm)高電圧(6.5kV)逆導通IGCT【Powered by NICT】
Large area (150mm) high voltage (6.5kV) reverse conducting IGCT
著者 (7件):
Stiasny Thomas
(ABB Switzerland Ltd., Semiconductors, Fabrikstrasse 3, 5600 Lenzburg, Switzerland)
,
Vemulapati Umamaheswara Reddy
(ABB Switzerland Ltd., Corporate Research, Segelhofstrasse 1K, 5405 Baden-Daettwil, Switzerland)
,
Wikstrom Tobias
(ABB Switzerland Ltd., Semiconductors, Fabrikstrasse 3, 5600 Lenzburg, Switzerland)
,
Waltisberg Christoph
(ABB Switzerland Ltd., Semiconductors, Fabrikstrasse 3, 5600 Lenzburg, Switzerland)
,
Frecker Mark
(ABB Switzerland Ltd., Semiconductors, Fabrikstrasse 3, 5600 Lenzburg, Switzerland)
,
Steimer Peter
(ABB Switzerland Ltd., Corporate Research, Segelhofstrasse 1K, 5405 Baden-Daettwil, Switzerland)
,
Rahimo Munaf
(ABB Switzerland Ltd., Semiconductors, Fabrikstrasse 3, 5600 Lenzburg, Switzerland)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
EPE’17 ECCE Europe
ページ:
P.1-P.8
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)